SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing technology which can efficiently use a gas contributing to deposition.

SOLUTION: A substrate processing apparatus comprises: a processing chamber provided with a substrate support part supporting a substrate; a gas supply part supplying a process gas from above the substrate support part into the processing chamber; a plasma generation part exciting the process gas supplied into the processing chamber; a gas exhaustion part provided below the substrate support part for exhausting gasses in the processing chamber; a gas flow suppression channel provided at an edge of the substrate support part for suppressing a flow of the excited process gas generated above the substrate support part to below the substrate support part to deactivate the process gas; and a protection member provided on an inner wall of the processing chamber on a region at least below a substrate loading surface of the substrate support part.

COPYRIGHT: (C)2012,JPO&INPIT