发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
摘要 According to one embodiment, a nonvolatile semiconductor memory device includes a nonvolatile memory, and a controller having a first mode to perform data transfer in response to one of a rising edge and falling edge of a first control signal and a second mode to perform data transfer in response to both of a rising edge and falling edge of a second control signal. The controller switches the first and second modes in data input and data output.
申请公布号 US2012246389(A1) 申请公布日期 2012.09.27
申请号 US201113235433 申请日期 2011.09.18
申请人 NAGASHIMA HIROYUKI 发明人 NAGASHIMA HIROYUKI
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
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