SENSE AMPLIFICATION CIRCUITS, OUTPUT CIRCUITS, NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS, MEMORY CARDS HAVING THE SAME, AND DATA OUTPUTTING METHODS THEREOF

摘要

An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.