| 摘要 |
A image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode, a charge storage node, an electron multiplication amplification structure, a unit for transferring electrons from the photodiode to the structure, a unit for transferring electrons from the amplification structure to the storage node after multiplication, a transistor for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations.
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