METHOD FOR FABRICATING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

A method for fabricating a contact hole in a semiconductor device is provided to inhibit etch residues generation simultaneously with reacting fluorinated etching gas during a via hole etching process. A method for fabricating a contact hole in a semiconductor device includes the steps of: forming a metal layer on an upper part of a substrate; forming a conductive barrier layer not to be reactive with the etch gas used during an etching process of an insulation layer formed on the metal layer; forming the insulation layer on the entire surface including the barrier layer; and forming holes to expose the barrier layer by etching the insulation layer.