发明名称 |
TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS |
摘要 |
A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.
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申请公布号 |
US2012238108(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201113227161 |
申请日期 |
2011.09.07 |
申请人 |
CHEN XIAOLIN;LIANG JINGMEI;INGLE NITIN K.;VENKATARAMAN SHANKAR;APPLIED MATERIALS, INC. |
发明人 |
CHEN XIAOLIN;LIANG JINGMEI;INGLE NITIN K.;VENKATARAMAN SHANKAR |
分类号 |
H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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