发明名称 |
Method for removing electricity and method for manufacturing semiconductor device |
摘要 |
An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat treatment or to favorably reduce static electricity with which a substrate is charged in a manufacturing process of a semiconductor device, heat treatment is performed with a substrate provided with a thin film transistor stored in a conductive container. In addition, a heating apparatus for performing the heat treatment is electrically connected to a ground potential, and the container and the substrate are also electrically connected to the ground potential. |
申请公布号 |
US8268642(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20100893541 |
申请日期 |
2010.09.29 |
申请人 |
YOSHITOMI SHUHEI;TSUBUKU MASASHI;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YOSHITOMI SHUHEI;TSUBUKU MASASHI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/00;H01L21/31;H01L21/469;H01L21/66;H01L51/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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