发明名称 |
Methods of fabricating large-area, semiconducting nanoperforated graphene materials |
摘要 |
Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets. |
申请公布号 |
US8268180(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US201113013531 |
申请日期 |
2011.01.25 |
申请人 |
ARNOLD MICHAEL S.;GOPALAN PADMA;SAFRON NATHANIEL S.;KIM MYUNGWOONG;WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
ARNOLD MICHAEL S.;GOPALAN PADMA;SAFRON NATHANIEL S.;KIM MYUNGWOONG |
分类号 |
B31D3/00 |
主分类号 |
B31D3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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