发明名称 |
Precursors and Methods for the Atomic Layer Deposition of Manganese |
摘要 |
Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.
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申请公布号 |
US2012231164(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213415358 |
申请日期 |
2012.03.08 |
申请人 |
THOMPSON DAVID;ANTHIS JEFFREY W.;APPLIED MATERIALS, INC. |
发明人 |
THOMPSON DAVID;ANTHIS JEFFREY W. |
分类号 |
C23C16/06;C07F13/00;H01L21/285 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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