| 摘要 |
<P>PROBLEM TO BE SOLVED: To propose a CMP technique capable of ensuring high flatness and reducing polishing flaws compatibly. <P>SOLUTION: A CMP apparatus comprises a supplying section 15 which supplies a slurry to a surface portion of a polishing pad 12 containing water soluble particles, a holding section 13 which brings an object 14 to be polished into contact with the surface portion of the polishing pad 12 while holding the object 14 to be polished, a temperature setting section 17 which is disposed in the surface portion of the polishing pad 12 and sets a temperature in the surface portion of the polishing pad 12, and a control section 18 which controls operations of the supplying section 15, the holding section 13 and the temperature setting section 17. The control section 18 executes a first polishing process of polishing the object 14 to be polished while setting the temperature in the surface portion of the polishing pad 12 within a first temperature range, and then executes a second polishing process of polishing the object 14 to be polished while setting the temperature in the surface portion of the polishing pad 12 within a second temperature range. <P>COPYRIGHT: (C)2012,JPO&INPIT |
