| 摘要 |
In some embodiments, the invention relates to a process for making a GaN substrate comprising: transferring a first monocrystal GaN layer onto a supporting substrate; applying crystal growth for a second monocrystal GaN layer on the first layer; the first and second GaN layers thereby forming together the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers, and removing at least one portion of the supporting substrate. |
