| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device which allows the processing of a large-size substrate. <P>SOLUTION: A plasma processing device according to the invention comprises: a chamber; a gas supply part for supplying required gas to inside the chamber; a first electrode which is disposed in the chamber and to which high frequency power is applied; capacitor parts formed above the first electrode and electrically connected with the first electrode; and a plurality of second electrodes formed above the capacitor parts and electrically connected with the capacitor parts. <P>COPYRIGHT: (C)2012,JPO&INPIT |
