Replacement low-K spacer

摘要

A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.

主权项

1. A method, comprising:
providing a gate structure having a dummy gate, and a first spacer along a side of the dummy gate;
removing the dummy gate and the first spacer to expose a gate dielectric;depositing a second spacer on at least one side of a gate structure cavity and a top of the gate dielectric;removing a bottom portion of the second spacer to expose the gate dielectric;wet cleaning the gate structure; andexerting stress on the gate structure after the depositing the second spacer and before the removing the bottom portion of the second spacer.