发明名称 SEMICONDUCTOR DEVICE AND PROCESS OF PRODUCING SAME, AND DISPLAY DEVICE
摘要 <p>A semiconductor device is produced, which comprises: a semiconductor layer; multiple electrode parts each of which is overlaid on the semiconductor layer; and an insulating layer which is arranged between the multiple electrode parts and is superposed on the semiconductor layer. A process of producing the semiconductor device comprises: a step of forming an oxide semiconductor layer which is partly covered with an insulating film; a step of forming a conductive material layer which covers the oxide semiconductor layer and the insulating film; a step of forming multiple electrode parts from the conductive material layer by photolithography and plasma dry etching and exposing a part of the oxide semiconductor layer from the multiple electrode parts and the insulating film; and a step of removing the part of the oxide semiconductor layer exposed from the multiple electrode parts and the insulating film to form a semiconductor layer.</p>
申请公布号 WO2012117695(A1) 申请公布日期 2012.09.07
申请号 WO2012JP01200 申请日期 2012.02.22
申请人 SHARP KABUSHIKI KAISHA;MIYAMOTO, MITSUNOBU 发明人 MIYAMOTO, MITSUNOBU
分类号 H01L21/336;G02F1/1368;H01L29/786 主分类号 H01L21/336
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