METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON- BASED MEMORY DEVICES, USING TITANIUM - RICH TITANIUM NITRIDE

摘要

In some aspects, a method of forming a reversible resistance-switch¬ ing metal-insulator-metal ("MIM") stack is provided, the method in¬ cluding: forming a first conducting layer (24) comprising a titani¬ um-rich titanium nitride (TiN) material having between about 50% Ti and about 95% Ti, forming a carbon nano-tube (CNT) material (12) above the first conducting layer, forming a second conducting layer (33) above the CNT material, and etching the first conducting layer, CNT material and second conducting layer to form the MIM stack. Nu merous other aspects are provided, amongst which an anneal step that results in the formation of a titanium carbide layer between the TiN layer (24) and the CNT layer (12).