| 摘要 |
<p>The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers. According to the present invention, a free magnetic layer constituting the magnetic tunnel junction structure consists of at least two or more magnetic thin films having different magnetic anisotropic directions and sizes, thereby independently optimizing the effect of increasing a read signal value and reducing a critical current value required for switching.</p> |
