| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor capable of reducing variation in device characteristics with using a polycrystalline oxide semiconductor as a channel and maintaining mobility of a carrier. <P>SOLUTION: A thin film transistor 1 is a bottom gate type TFT and comprises a gate electrode 12, a gate insulation film 13, a channel layer 14 consisting primarily of a polycrystalline oxide semiconductor, and source-drain electrodes 15A, 15B formed on a substrate 11 in this order. The channel layer 14 is formed such that the thickness becomes smaller than a diameter of an average crystal grain of the polycrystalline oxide semiconductor included in the channel layer. Accordingly, a transit direction of a carrier is controlled and device characteristics are stabilized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
