| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for inhibiting a large current from flowing partially through a semiconductor chip. <P>SOLUTION: A semiconductor device comprises a semiconductor chip 1 having a gate electrode 5 and a stress detection element 7 provided on a surface of the semiconductor chip 1 to detect a stress applied to the surface. The semiconductor device controls a control signal applied to the gate electrode 5 on the basis of a stress detected by the stress detection element 7. Further, it is preferable that a first stress detection element 7-1 is provided as the stress detection element 7 detecting stress applied to the center of the semiconductor chip 1 when viewed from above, and a second stress detection element 7-2 is provided as the stress detection element 7 detecting stress applied to an outer periphery of the semiconductor chip 1 when viewed from above. <P>COPYRIGHT: (C)2012,JPO&INPIT |
