Provided is a solid-state imaging device comprising a plurality of pixel circuits GC having photoelectric conversion characteristics including linear characteristics and logarithmic characteristics on either side of an inflection point. The pixel circuits GC each include a photoelectric conversion element PD which accumulates a signal charge by exposing a subject, and a floating diffusion FD which converts the signal charge accumulated by the photoelectric conversion element PD into a voltage signal. The floating diffusion FD is set to have an operating charge that is smaller than a saturation charge of the photoelectric conversion element PD.
