| 摘要 |
<p>The occurrence of internal stress is reduced during the solar cell production process, thereby reducing crystal defects and recombination loss. Provided is a method for producing a solar cell having a p-n junction, which involves a step for forming a p-type layer on a semiconductor substrate by applying a coating liquid for diffusion containing impurity which serves as an acceptor, and by diffusing the impurity by means of thermal diffusion and/or a step for forming an n-type layer on a semiconductor substrate by applying a coating liquid for diffusion containing impurity which serves as a donor, and by diffusing the impurity through a thermal diffusion treatment.</p> |
