| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic device using a group III nitride compound semiconductor by using an appropriate index for highly purifying an epitaxial film grown under a varying growth condition in an organic metal vapor phase epitaxy furnace. <P>SOLUTION: In a step S103, a gallium nitride semiconductor layer 13 is grown on an n-type GaN substrate 11. In a step S104, a PL spectrum of a wavelength region including a yellow band wavelength band and a wavelength region including a band edge wavelength corresponding to a band edge of the gallium nitride semiconductor layer, is measured at room temperature. In a step S106, a photoluminescence spectrum intensity of the yellow band wavelength band and the band edge wavelength is compared with a reference value to select the epitaxial substrate and produce a selected epitaxial substrate E1. In a step S107, an electrode 15 for an electronic device is formed on the selected epitaxial substrate 13. <P>COPYRIGHT: (C)2012,JPO&INPIT |
