| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor-phase growth apparatus that can simplify the insulation structure between a process chamber and heating means, can improve the heating efficiency of a substrate to be processed, and can prevent progression of aged deterioration due to overheating by the heating means. <P>SOLUTION: A vapor-phase growth apparatus comprises: a process chamber 12 in which a wafer holder 14 supporting a substrate to be processed 50 is disposed; a coil chamber 22 that is provided in the process chamber 12 and in which induction heating coils 32 (32a to 32f) are disposed; purge gas supply means 46 that is disposed in the coil chamber 22 and maintains the atmospheric pressure in the coil chamber 22 higher than that in the process chamber 12; and a heat-generating source 28 that spatially shields the coil chamber 22 and the process chamber 12 and is heated by the induction heating coils 32. The wafer holder 14 preferably has at least one through hole 18 having a counterbore 16 for supporting the substrate to be processed 50. <P>COPYRIGHT: (C)2012,JPO&INPIT |
