| 摘要 |
A process for producing an integrated circuit on the surface of a substrate, the process including: producing a first layer, including active zones and insulating zones, on the surface of the substrate; producing gate zones on the surface of the first layer, the gate zones each being surrounded by insulating spacers; producing source/drain electrodes; producing a dielectric layer between the insulating spacers, the dielectric layer having an upper surface level with the upper surfaces of the gate zones; partially etching each gate zone so as to lower the upper surface of a first part of each gate zone; and depositing an insulating dielectric layer on the first parts of the gate zones. |
