| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to prevent the generation of a chucking error in the mask process for forming a gate pattern by forming the thickness of a nitride layer under 2000Å. CONSTITUTION: A gate insulating layer(205) is formed on a semiconductor substrate(200). A barrier metal film(210) is formed on the gate insulating layer. A gate metal film(220) is formed on the barrier metal film. A first nitride layer(225) having first thickness is formed on the gate metal film. The barrier metal film is arranged between the gate insulating layer and the gate metal film. The gate metal film is formed into material in which resistance is low. A second nitride layer(230) having second thickness(d2) is formed on the first nitride layer.</p> |
