发明名称 |
Method of integrating a MOSFET with a capacitor |
摘要 |
A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer.
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申请公布号 |
US8247288(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20100947717 |
申请日期 |
2010.11.16 |
申请人 |
XUE YAN XUN;BHALLA ANUP;YILMAZ HAMZA;LU JUN;ALPHA & OMEGA SEMICONDUCTOR INC. |
发明人 |
XUE YAN XUN;BHALLA ANUP;YILMAZ HAMZA;LU JUN |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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