| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer. |
| 申请公布号 |
US8247844(B2) |
申请公布日期 |
2012.08.21 |
| 申请号 |
US20090574995 |
申请日期 |
2009.10.07 |
| 申请人 |
OISHI TOSHIYUKI;YAMAMOTO YOSHITSUGU;OTSUKA HIROSHI;YAMANAKA KOJI;INOUE AKIRA;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
OISHI TOSHIYUKI;YAMAMOTO YOSHITSUGU;OTSUKA HIROSHI;YAMANAKA KOJI;INOUE AKIRA |
| 分类号 |
H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L31/0328 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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