| 摘要 |
The present invention provides a method for manufacturing a semiconductor structure, comprising: providing a substrate, and forming a dummy gate stack on the substrate, sidewall spacers on sidewalls of the dummy gate stack, and source/drain regions at both sides of the dummy gate stack, wherein the dummy gate stack comprising a dummy gate; forming a first contact layer on surfaces of the source/drain regions; forming an interlayer dielectric layer to cover the first contact layer; removing the dummy gate or the dummy gate stack material to form an opening, filling the opening with a first conductive material or with a gate dielectric layer and a first conductive material to form a gate stack structure; forming through holes within the interlayer dielectric layer, so that a portion of the first contact layer or a portion of the first contact layer and the source/drain regions are exposed in the through holes; forming a second contact layer on the exposed portions of the regions; filling the through holes with a second conductive material to form contact vias. Besides, the present invention further provides a semiconductor structure, which is favorable for reducing the contact resistance.
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