发明名称 METHOD OF FORMING RESIST PATTERN
摘要 A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits increased solubility in an organic solvent under action of acid and an acid generator component which generates acid upon exposure; conducting exposure of the resist film; and patterning the resist film by positive development using a developing solution containing the organic solvent to form a resist pattern, wherein a resin component containing a structural unit derived from an acrylate ester which may have a hydrogen atom bonded to a carbon atom on theα-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by action of acid is used as the component (A), and a developing solution that contains a polar organic solvent but contains substantially no alkali components is used as the developing solution.
申请公布号 US2012208131(A1) 申请公布日期 2012.08.16
申请号 US201213372740 申请日期 2012.02.14
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HIRANO TOMOYUKI;SHIONO DAIJU
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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