发明名称 |
METHOD OF FORMING RESIST PATTERN |
摘要 |
A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits increased solubility in an organic solvent under action of acid and an acid generator component which generates acid upon exposure; conducting exposure of the resist film; and patterning the resist film by positive development using a developing solution containing the organic solvent to form a resist pattern, wherein a resin component containing a structural unit derived from an acrylate ester which may have a hydrogen atom bonded to a carbon atom on theα-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by action of acid is used as the component (A), and a developing solution that contains a polar organic solvent but contains substantially no alkali components is used as the developing solution.
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申请公布号 |
US2012208131(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213372740 |
申请日期 |
2012.02.14 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HIRANO TOMOYUKI;SHIONO DAIJU |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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