| 摘要 |
The invention relates to material engineering and can be used in radioelectronics, semiconductor and optoelecronic instrument making, in particular in manufacturing infrared devices. Disclosed is a method for reducing concentration of acceptors in crystals with native defects, in which crystals are grown using Bridgman vertical method or solid-state recrystallization, moreover the middle part of the grown crystal is cut; the manufactured crystals are cut in the form of parallelepiped with dimensions ofmm, mechanically finished and chemically polished in brome-mental etchant 5 % Br+ 95 % CHOH, and deformed by a dynamic loading along a long rib under the room temperature up to relative deformation, thereafter the deformed layer enriched with dislocations is chemically etched for a thickness of 100-200 μm. The technical result of the invention is reducing concentration of acceptors in crystals with native defects. |
