| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, a protective film of the same, and a manufacturing method of the same, capable of attaining both high migration preventing property and hydrogen blocking property. <P>SOLUTION: In the semiconductor light-emitting element which comprises: a plurality of semiconductor layers 12 to 14 formed on a substrate 11; and electrode parts 15 and 16 and electrode parts 17 and 18 to be electrodes of the plurality of semiconductor layers 12 to 14, peripherals of the plurality of semiconductor layers 12 to 14, electrode parts 15 and 16, and electrode parts 17 and 18 are coated, as a protecting film therefor, with a SiN film 21 composed of silicon nitride whose Si-H bonding amount in the film is 1.0×10<SP POS="POST">20</SP>/cm<SP POS="POST">3</SP>or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
