| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of a high-speed operation, which has high reliability. <P>SOLUTION: An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor, and a channel formation region, a source region and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by performing ion doping or ion implantation of one or a plurality types of elements selected from a rare gas and hydrogen into the semiconductor layer by using a channel protection layer as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
