发明名称 |
Method for manufacturing a multi-wavelength integrated semiconductor laser |
摘要 |
An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics. A first semiconductor laser element 100 having an active layer AL1 for emitting a laser beam of a first wavelength from its light-emitting point X1 and a second semiconductor laser element 200 having an active layer AL2 for emitting a laser beam of a second wavelength from its light-emitting point X2 are bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elements 100 and 200 are bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser element 100 via metal at a side where its ridge waveguide is formed.
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申请公布号 |
US8236588(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20060158648 |
申请日期 |
2006.12.14 |
申请人 |
MIYACHI MAMORU;KIMURA YOSHINORI;PIONEER CORPORATION |
发明人 |
MIYACHI MAMORU;KIMURA YOSHINORI |
分类号 |
H01S3/063 |
主分类号 |
H01S3/063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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