发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
摘要 PURPOSE: A semiconductor device and a method for driving the same are provided to lower a refresh frequency by allowing information to be memorized by insulating an oxide semiconductor insulator. CONSTITUTION: A semiconductor layer includes a channel forming region. A third gate includes an oxide semiconductor. A third gate includes a first area(221) and a second area(222). The first area is overlapped with a first gate and the channel forming region. The second area is electrically connected with wiring.
申请公布号 KR20120087849(A) 申请公布日期 2012.08.07
申请号 KR20120008416 申请日期 2012.01.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 UOCHI HIDEKI
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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