Semiconductor fabrication process including recessed source/drain regions in an SOI wafer,申请号KR20077015260-传众专利搜索

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发明名称	Semiconductor fabrication process including recessed source/drain regions in an SOI wafer
摘要
申请公布号	KR101169920(B1)	申请公布日期	2012.08.06
申请号	KR20077015260	申请日期	2005.11.30
申请人		发明人
分类号	H01L21/00	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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