Producing germanium layer on lattice mismatched substrate, useful for producing integrated semiconductor components, comprises depositing germanium on substrate, etching back, and depositing further germanium

摘要

Producing germanium layer on a lattice mismatched substrate (10) in a reactor, comprises: (a) depositing germanium on the substrate for producing a preliminary germanium layer (12) with a first layer thickness; (b) etching back a fraction of the first layer thickness of the preliminary germanium layer; and (c) further depositing germanium on the preliminary germanium layer remaining after etching back, until a required layer thickness of the germanium layer to be produced is obtained. An independent claim is also included for producing integrated semiconductor component exhibiting a germanium layer, comprising the above method.