发明名称 STRESS SENSOR FOR IN-SITU MEASUREMENT OF PACKAGE-INDUCED STRESS IN SEMICONDUCTOR DEVICES
摘要 A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
申请公布号 US2012193734(A1) 申请公布日期 2012.08.02
申请号 US201213444786 申请日期 2012.04.11
申请人 INTEL CORPORATION 发明人 FARAHANI MOHAMMAD M.;NOVESKI VLADIMIR;PATEL NEHA M.;RARAVIKAR NACHIKET R.
分类号 H01L29/84;B82Y40/00;B82Y99/00;G01B7/16;H01L21/02 主分类号 H01L29/84
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