发明名称 MASK DETERMINATION METHOD, EXPOSURE METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask determination method capable of decreasing costs for manufacturing masks by increasing a non-defective rate of masks. <P>SOLUTION: A mask determination method according to an embodiment includes: a step for measuring at least one of an in-plane error average value within a mask surface and an in-plane variation distribution within the mask surface, with respect to at least one of a size of a mask pattern formed on the mask and optical characteristics; a step for calculating, based on at least one of the in-plane error average value and the in-plane variation distribution, illumination conditions for making a cost function, which shows an image performance that is formed on a substrate when an on-substrate pattern is formed on the substrate by irradiating the mask with exposure light emitted from an illumination light source, closer to a desired value; and a step for determining whether the mask is defective or non-defective based on whether or not the image performance is within a predetermined allowable range when the on-substrate pattern is formed on the substrate by irradiating the mask with the exposure light under the illumination conditions. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012141372(A) 申请公布日期 2012.07.26
申请号 JP20100292657 申请日期 2010.12.28
申请人 TOSHIBA CORP 发明人 FUKUHARA KAZUYA
分类号 G03F1/84 主分类号 G03F1/84
代理机构 代理人
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