SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an element isolation structure capable of achieving an element with further reduced parasitic capacitance and to provide a method of manufacturing the same.

SOLUTION: A semiconductor device formed on an SOI substrate comprises: an element isolation trench (cavity) 17 formed in an element isolation region; and a cavity region 20 that is formed in a portion of a buried insulating layer interposed between a semiconductor layer 11 and a supporting substrate 13 and contacts the element isolation trench (cavity) 17. This structure can reduce parasitic capacitance and can improve the breakdown voltage of the element.

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