发明名称 |
Manufacture method for ZnO-based light emitting device |
摘要 |
A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. |
申请公布号 |
US8227281(B2) |
申请公布日期 |
2012.07.24 |
申请号 |
US20100874533 |
申请日期 |
2010.09.02 |
申请人 |
OKADA SATOSHI;KATO HIROYUKI;HORIO NAOCHIKA;STANLEY ELECTRIC CO., LTD. |
发明人 |
OKADA SATOSHI;KATO HIROYUKI;HORIO NAOCHIKA |
分类号 |
H01L21/00;H01L21/16 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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