| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a unit comprising a seed material and a feed material enabling to reduce the cost required for liquid phase epitaxial growth of single crystal silicon carbide. <P>SOLUTION: Each of the feed material 11 and the seed material 12 has a surface layer containing polycrystalline silicon carbide whose crystal polymorph is 3C, and when the surface layer is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane is observed. Among the (111) crystal planes, the proportion occupied by those having an orientation angle of 67.5° or larger is smaller for the feed material 11 than for the seed material 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
