| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrically rewritable semiconductor nonvolatile memory device that suppresses the degradation of a tunnel insulating film without increasing an occupation area and has high reliability. <P>SOLUTION: A plurality of tunnel insulating films having different film thicknesses are formed between a tunnel region and a floating gate electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
