| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which shortens a time required for program verification which repeats writing and reading while maintaining reading accuracy. <P>SOLUTION: In the semiconductor storage device, when verification of data is read from a memory string in a memory cell array, a fail bit counter counts the number of inhibit cells and the number of fail cells, a control circuit calculates a lifting voltage of a common source line CSL generated by an electric current passing through the common source line CSL from the number of the inhibit cells and the number of the fail cells which have been counted by the control circuit, and corrects a voltage which is applied to a bit line and a word line according to the calculated voltage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
