| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is capable of determining whether a threshold voltage between a pair of memory cells is high enough to hold data. <P>SOLUTION: A nonvolatile semiconductor memory device is provided, which includes a differential sense amplifier DiffSA which detects a current difference of a pair of memory cells including a first memory cell and a second memory cell respectively connected to a first bit line and a second bit line, which have a threshold voltage between the first memory cell and the second memory cell, and read out data; a first page buffer PBUF_L and a second page buffer PBUF_R respectively placed at the first bit line and second bit line, which include latches storing data written/read into/from the memory cells, which are selected by word lines; a comparator COMP1 which compares data which is read to the latch LTL with data which is read to the latch LTR and determines whether the threshold voltage between a pair of memory cells is high enough for a pair of memory cells to hold data. <P>COPYRIGHT: (C)2012,JPO&INPIT |
