发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING DIODE USING NANO-STRUCTURE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY |
摘要 |
PURPOSE: A method for manufacturing a light emitting diode using a nanostructure and a light emitting diode manufactured thereby are provided to improve light extraction efficiency through dry etching using a nanostructure. CONSTITUTION: An active layer and a second semiconductor layer are successively formed on a first semiconductor layer. A spherical nanostructure is coated on the second semiconductor layer(S10). The second semiconductor layer is dried and etched by using the nanostructure as a mask(S20). An uneven portion is formed on the second semiconductor layer(S30). Fine patterning is performed so that a sub uneven portion is formed on each uneven surface constituting the uneven portion by wet-etching the uneven portion(S40).
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申请公布号 |
KR20120077534(A) |
申请公布日期 |
2012.07.10 |
申请号 |
KR20100139523 |
申请日期 |
2010.12.30 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
LEE, JONG LAM;KIM, JONG UK;SON, JUN HO |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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