发明名称 METHOD OF MANUFACTURING LIGHT EMITTING DIODE USING NANO-STRUCTURE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
摘要 PURPOSE: A method for manufacturing a light emitting diode using a nanostructure and a light emitting diode manufactured thereby are provided to improve light extraction efficiency through dry etching using a nanostructure. CONSTITUTION: An active layer and a second semiconductor layer are successively formed on a first semiconductor layer. A spherical nanostructure is coated on the second semiconductor layer(S10). The second semiconductor layer is dried and etched by using the nanostructure as a mask(S20). An uneven portion is formed on the second semiconductor layer(S30). Fine patterning is performed so that a sub uneven portion is formed on each uneven surface constituting the uneven portion by wet-etching the uneven portion(S40).
申请公布号 KR20120077534(A) 申请公布日期 2012.07.10
申请号 KR20100139523 申请日期 2010.12.30
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 LEE, JONG LAM;KIM, JONG UK;SON, JUN HO
分类号 H01L33/22 主分类号 H01L33/22
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