发明名称 Programming non-volatile storage including reducing impact from other memory cells
摘要 A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells using a programming signal that increases over time. Subsequent to the first trigger and prior to a second trigger, the first group of memory cells are programmed separately from the second group of memory cells using a programming signal that has been lowered in magnitude in response to the first trigger. Subsequent to the second trigger, the first group of memory cells are programmed together with the second group of memory cells with the programming signal being raised in response to the second trigger. Before and after both triggers, the first group of memory cells are verified together with the second group of memory cells.
申请公布号 US8218366(B2) 申请公布日期 2012.07.10
申请号 US20100762342 申请日期 2010.04.18
申请人 DONG YINGDA;LEE SHIH-CHUNG;OOWADA KEN;SANDISK TECHNOLOGIES INC. 发明人 DONG YINGDA;LEE SHIH-CHUNG;OOWADA KEN
分类号 G11C16/04 主分类号 G11C16/04
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