发明名称 |
METHOD FOR REFINING SILICON USING GAS BLOWING AND METHOD FOR FABRICATING SUNLIGHT-LEVEL SILICON USING THE SAME |
摘要 |
PURPOSE: A method for refining silicon using gas blowing and a method for manufacturing solar light level silicon using the same are provided to refine silicon based on the gas blowing and to eliminate impurities from molten silicon based on chemical reactions. CONSTITUTION: A method for refining silicon using gas blowing includes the following: silicon is heated in a chamber(S2); the temperature of silicon molten in the chamber is measured(S3); if the temperature of the silicon molten is reached to a set temperature, refining gas is introduced into the silicon molten(S4, S5); and slag floated on the upper layer of the silicon molten is eliminated by the chemical reaction of the refining gas and the slag(S6). The set temperature is in a range between 1600 and 1800 degrees Celsius. The refining gas includes at least one of H_2O, H_2, and Ar. |
申请公布号 |
KR20120073915(A) |
申请公布日期 |
2012.07.05 |
申请号 |
KR20100135841 |
申请日期 |
2010.12.27 |
申请人 |
POSCO;RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
LEE, GYU CHANG;PARK, JOON PYO;KIM, MYOUNG GYUN;LEE, BYONG PIL;KIM, JONG HO;SEOK, SEONG HO;KIM, SUNG WOOK |
分类号 |
C01B33/037;C30B29/06;H01L31/04 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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