| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simple charged body enabling a memory device to be manufactured by printing and coating without requiring an ultra-thin insulating layer, such as a floating gate memory and an MNOS (metal-nitride-oxide-silicon) memory and the like, and whose injection charge amount can be easily controlled, and to provide an FET and a memory device enabling threshold voltage control and being capable of holding a controlled threshold voltage state for a long time by producing the FET by using the charged body as a gate insulation film. <P>SOLUTION: A charged body is configured by an insulation object obtained by laminating two kinds of insulators of an insulator (hereinafter, referred to as a high charge injection withstanding voltage material) whose electric field intensity at which charge injection occurs (hereinafter, referred to as a charge injection withstanding voltage) and an insulating withstanding voltage are E<SB POS="POST">CI,H</SB>and E<SB POS="POST">BH</SB>, respectively, and an insulator (hereinafter, referred to as a low charge injection withstanding voltage material) whose charge injection withstanding voltage E<SB POS="POST">CI,L</SB>satisfies a relationship of E<SB POS="POST">CI,L</SB><E<SB POS="POST">Cl,H</SB>. A voltage is applied to two electrodes contacting with the high charge injection withstanding voltage material and the low charge injection withstanding voltage material respectively and being separated from each other at an electric field intensity satisfying E<SB POS="POST">CI,L</SB><¾E¾<E<SB POS="POST">BH</SB>to inject electric charge into the insulators from the low charge injection withstanding voltage material side and to charge the insulators. <P>COPYRIGHT: (C)2012,JPO&INPIT |
