| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element with improved light sensitivity and to provide a method of manufacturing the same. <P>SOLUTION: A photoelectric conversion element comprises: a semiconductor substrate 101; a well region 102 formed in the semiconductor substrate 101; and a light-receiving section formed in the well region 102. The light-receiving section has a first semiconductor region 103 and a second semiconductor region 104. The second semiconductor region 104 is disposed closer to a surface side of the semiconductor substrate 101 than the first semiconductor region 103. The forbidden band width of the second semiconductor region 104 is wider than that of the first semiconductor region 103. <P>COPYRIGHT: (C)2012,JPO&INPIT |
