MULTI-LAYER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
摘要
PURPOSE: A multilayer semiconductor device and a manufacturing method thereof are provided to prevent voids by connecting signal lines between unit semiconductor packages using a metal pin insertion method. CONSTITUTION: A top unit semiconductor package(200) is formed on a bottom unit semiconductor package(100). An organic layer(230) is formed on the lower side of the top unit semiconductor package. A metal pin(130) of the bottom unit semiconductor package is inserted into a hole of the top unit semiconductor package. An insulation layer(240) is formed between the metal pin and a silicon substrate(210). A top unit semiconductor package(300) is stacked on the top unit semiconductor package.
申请公布号
KR20120072451(A)
申请公布日期
2012.07.04
申请号
KR20100134210
申请日期
2010.12.24
申请人
KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人
PARK, JONG CHUL;KIM, JUN CHUL;PARK, SE HOON;YOOK, JONG MIN