发明名称 |
Semiconductor system using germanium condensation |
摘要 |
A semiconductor method includes providing a silicon semiconductor substrate. A gate and a plurality of source/drain regions are formed on the silicon semiconductor substrate to form at least one pFET. A silicon-germanium layer is formed over the plurality of source/drain regions. The germanium is condensed from the silicon-germanium layer to form a plurality of source/drains in the plurality of source/drain regions by forming an oxide layer over the silicon-germanium layer. An interlevel dielectric layer is formed over the gate and the source/drain regions. A plurality of contacts is formed in the interlevel dielectric layer to the gate and the plurality of source/drain regions. |
申请公布号 |
US8211761(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20060465005 |
申请日期 |
2006.08.16 |
申请人 |
TAN SHYUE SENG;CHONG YUNG FU;TEO LEE WEE;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
TAN SHYUE SENG;CHONG YUNG FU;TEO LEE WEE |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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